Presentation
ChipletEM: Physics-Based 2.5D and 3D Chiplet Integration Electromigration Signoff Tool Using Coupled Stress and Thermal Simulation
DescriptionElectromigration (EM) has become one of the major challenges for
2.5D and 3D chiplet integration systems. However, most of the re-
search for EM focus on 2D power delivery network and cannot take
the vertical power supply structures and non-uniformly thermal
distribution condition between dies into consideration. To mitigate
this problem, in this article a novel EM simulation tool ChipletEM
for 2.5D and 3D chiplet integration systems is proposed. A finite vol-
ume method (FVM) based electrical-thermal co-simulation model
is employed to get initial temperature and current density inside
TSV. A finite difference time domain (FDTD) solver is employed for
hydrostatic stress simulation for both nucleation and post-voiding
phases. Thermal migration effect is also considered in that solver.
A compact TSV thermal solver is employed for temperature distri-
bution simulation and thermal dependent current simulation. The
FDTD EM solver and TSV thermal solver are coupled together at
each time step so that the interaction among EM stress, thermal
stress, void growth, resistance change, IR drop and joule heating
effects can be simulated in a single simulation framework. Accuracy
of the proposed tool is validated with commercial finite element
(FEM) tool and published experiment data. Comparison results
show that the proposed method has high accuracy and fast sim-
ulation speed. EMChiplet get 10 times speed up compared with
commercial FEM tool and only have 2% of accuracy trade off.
Furthermore, comparednd with experiment result the average error
is less then 5%
2.5D and 3D chiplet integration systems. However, most of the re-
search for EM focus on 2D power delivery network and cannot take
the vertical power supply structures and non-uniformly thermal
distribution condition between dies into consideration. To mitigate
this problem, in this article a novel EM simulation tool ChipletEM
for 2.5D and 3D chiplet integration systems is proposed. A finite vol-
ume method (FVM) based electrical-thermal co-simulation model
is employed to get initial temperature and current density inside
TSV. A finite difference time domain (FDTD) solver is employed for
hydrostatic stress simulation for both nucleation and post-voiding
phases. Thermal migration effect is also considered in that solver.
A compact TSV thermal solver is employed for temperature distri-
bution simulation and thermal dependent current simulation. The
FDTD EM solver and TSV thermal solver are coupled together at
each time step so that the interaction among EM stress, thermal
stress, void growth, resistance change, IR drop and joule heating
effects can be simulated in a single simulation framework. Accuracy
of the proposed tool is validated with commercial finite element
(FEM) tool and published experiment data. Comparison results
show that the proposed method has high accuracy and fast sim-
ulation speed. EMChiplet get 10 times speed up compared with
commercial FEM tool and only have 2% of accuracy trade off.
Furthermore, comparednd with experiment result the average error
is less then 5%
Event Type
Research Manuscript
TimeWednesday, June 2511:45am - 12:00pm PDT
Location3003, Level 3
EDA
EDA8: Design for Manufacturing and Reliability