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DTSTART:19700308T020000
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DTSTART:19701101T020000
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BEGIN:VEVENT
DTSTAMP:20260402T024532Z
LOCATION:2008\, Level 2
DTSTART;TZID=America/Los_Angeles:20250623T161500
DTEND;TZID=America/Los_Angeles:20250623T163000
UID:dac_DAC 2025_sess215_ENGPRES259@linklings.com
SUMMARY:Analysis of Electrostatic Discharge (ESD) for 3DIC systems
DESCRIPTION:Anila Azam (Intel Corporation)\n\nElectrostatic Discharge (ESD
 ) poses new challenges in multi-die (2.5D and 3D) systems. Traditional ESD
  analysis focuses on single-die systems, but multi-die systems introduce n
 ew discharge paths from die-to-die, necessitating a comprehensive assessme
 nt through simulation. This study applies well-established ESD simulation 
 methodologies to the entire multi-die system, including package and interp
 oser, using novel simulation tools. This approach involves Current Density
  (CD) and Resistance (R) checks to identify potential violations that sing
 le-die analysis might miss. The findings highlight the importance of asses
 sing ESD vulnerability in 3DIC systems to ensure their safety and reliabil
 ity, and may be critical to signing off on designs before production going
  forward.\n\nTopics: AI, Systems and Software, Chiplet\n\nSession Chair: F
 rank Schirrmeister (Synopsys)\n\n
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